摘要: Some aspects of the random impurity problem in crystals are studied. A method dealing with substitutional impurities having large defect spaces is given. The expressions found derived within single-site scattering approach and exact to c. effect “local” force constant changes also considered. Es werden einige Aspekte von Statistisch gleichverteilten Storstellen Kristallen untersucht. Eine Methode wird entwickelt, mit der man substitutionelle behandeln kann, die einen grosen Bereich ihrer Umgebung storen. Die Ergebnisse Nahe-rung Einzentrenstreuung hergeleitet und sind ersten Ordnung c exakt. Auserdem Einflus lokalen Kraftkonstantenanderungen
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