Method for operating a memory array
作者： Ko-Min Chang , Kuo-Tung Chang , Craig A. Cavins , George L. Espinor , Bruce L. Morton
DOI:
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摘要: A memory array (25) having a selected cell (10) and an unselected (30) is programmed read. Each in the contains isolation transistor (22) floating gate (23). To program (10), programming voltages are applied to control line (21), drain (14), (19), source (12). reduce effects of disturb problem, terminal (32) held at positive voltage. read voltage (31) which insures that does not conduct or contribute leakage current power consumption during operation.
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