Growth of p-type ZnO films and fabrication of ZnO photodiode-based UV detectors

作者: Jian Huang , Linjun Wang , Run Xu , Ke Tang , Weimin Shi

DOI: 10.1088/0268-1242/24/7/075025

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摘要: In this work, Al–N-co-doped ZnO films were deposited on the smooth nucleation side of a freestanding diamond film by radio-frequency (RF) reactive magnetron sputtering method. The influence atmosphere and substrate temperature conduction type was studied. photodiodes fabricated depositing p-type Al-doped n-type films. photodiode exhibited distinct rectifying current–voltage (I–V) characteristics with turn-on voltage ~2.0 V. used for UV detector application showed significant discrimination between visible light.

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