Transport properties of two-dimensional electron gases containing InAs self-assembled dots
作者： G. H. Kim , D. A. Ritchie , M. Pepper , G. D. Lian , J. Yuan
DOI: 10.1063/1.122484
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摘要: We present a study of the transport properties two-dimensional electron gases formed in GaAs/AlGaAs heterostructures which InAs self-assembled quantum dots have been inserted center GaAs well. observed that, while maintaining constant carrier density, mobility increased as dot density was reduced. The ratio to lifetime measured be approximately five with dominant scattering mechanism attributed short-range from dots.
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