Formation of planar superlattice states in new grid‐inserted quantum well structures
作者： Masaaki Tanaka , Hiroyuki Sakaki
DOI: 10.1063/1.100705
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摘要: We have prepared by molecular beam epitaxy a new type of planar superlattice (PSL), in which an array periodically spaced AlAs bars one monolayer (ML) thickness is inserted the middle GaAs quantum well. This grid‐inserted well (GI–QW) on misoriented substrate 2° off from (001) axis depositing 0.5 ML during growth usual QW. Photoluminescence excitation spectra are measured at 20 K and shown clear dependence polarization light, reflecting in‐plane anisotropy electronic structures. The ratio electron–heavy hole (e–hh) electron–light (e–lh) transition peaks has dependence, good agreement with theory; this demonstrates that atoms deposited atomic terraces formed periodic potential as intended given rise to PSL states novel structure.
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