Interface roughness of GaAs‐AlAs quantum wells grown by molecular‐beam epitaxy: Misorientation effects
作者： Masaaki Tanaka , Hiroyuki Sakaki
DOI: 10.1063/1.341277
关键词: Misorientation 、 Epitaxy 、 Crystal growth 、 Exciton 、 Photoluminescence 、 Crystallography 、 Quantum well 、 Laser linewidth 、 Molecular beam epitaxy 、 Chemistry 、 Condensed matter physics
摘要: We have studied the atomic steps and/or terraces at interfaces of GaAs‐AlAs quantum wells (QWs) grown by molecular‐beam epitaxy on slightly misoriented GaAs substrates from (001) toward [110] with various off angles α=0°, 0.5°, 1°, 2°, and 5°. It was found that terrace edges surface/interface are either randomly spaced or kinked, leading to broadening photoluminescence (PL) linewidth. explained PL data considering diffusion length Ldiff Ga Al atoms growth front, average width Loff due misorientation, in relation exciton size Dex QWs. Unlike case flat substrates, interruption has little effect reduction linewidth QWs substrates.
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