摘要: The minority-carrier leakage is investigated over a step pn heterojunction in terms of an equivalent interface recombination velocity taking the relative large effective lifetimes measured by photoluminescence thin active zones GaAlAs double-heterostructures into account. Kramer's escape, tunneling, thermionic emission, and effect applied voltage are considered. A principal understanding possibility small found experimentally provided. Der Leckstrom der Minoritatsladungstrager uber einen abrupten Heteroubergang Form einer aquivalenten Grenzflachen-Rekombinationsgeschwindigkeit wird untersucht und dabei von den relativ grosen effektiven Lebensdauern ausgegangen, die mittles Photolumineszenz dunnen aktiven Zonen GaAlAS-Doppel-Heterostrukturen gemessen werden. Kramers-Escape, Tunneln, thermionische Emission Effekt angelegten Spannung werden berucksichtigt. Ein prinzipielles Verstandnis Moglichkeit kleiner Leckstrome erreicht.
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