Electron transfer between regions of quasi-two-dimensional and three-dimensional dynamics in semiconductor microstructures

摘要: A theoretical study is carried out on the transfer of electrons at edge a microstructure, where may cross between region quasi-two-dimensional dynamics and ``contact region'' three-dimensional dynamics. Working in one-electron, effective-mass approximation, formal solution found for model having general profile confining potential two-dimensional region. The form threshold behavior ejection probabilites injection sections. Numerical results are obtained case parabolic potential.