Temperature dependence of the crystallite size and crystalline fraction of microcrystalline silicon deposited from silane by plasma CVD

摘要: Exact evaluation of the crystallite size plasma deposited nanocrystalline silicon requires application Warren-Averbach analysis to X-ray diffraction peak profiles. Use simple Scherrer formula leads incorrect values due mechanical stress in films. The increases monotonously with deposition temperature. apparent transition amorphous phase at T dep ≈ 450 − 500°C, which has been reported by other workers and explained terms an insufficient chemical potential atomic hydrogen previously, is artefact caused oxygen impurities during deposition.