The evolution of cavities in Si at the 3C-SiC/Si interface during 3C-SiC deposition by LPCVD
作者： V. Papaioannou , H. Möller , M. Rapp , L. Vogelmeier , M. Eickhoff
DOI: 10.1016/S0921-5107(98)00469-3
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摘要: The evolution of cavities in the Si-overlayer (SOL) silicon on insulator (SOI) wafers, which are formed during epitaxial growth 3C-SiC, was studied by combined Transmission Electron Microscopy (TEM) and Atomic Force (AFM) observations. effect SiC SOL thickness, as well rate growth, formation is discussed. volume missing due to measured AFM. It shown that a small portion Si ball up at edges inside buried oxide (BOX) instability Si/SiO 2 system high temperatures. Another part consumed order form carbonization process finally significant out-diffused deposition first 200 nm film.
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