Influence of the silicon overlayer thickness of SOI unibond substrates on β-SIC heteroepitaxy

摘要: Abstract The present paper describes the epitaxial growth of high quality 3C–SiC on top silicon insulator (SOI) UNIBOND substrates, to achieve an electrical insulation. process was performed at 1200°C using methylsilane as precursor gas. crystal proved X-ray analysis. FWHM [200] rocking curve reflex determined 0.31° a 200 nm thick SOL. A serial resistance SiO2 layer 2.5·1012 Ω mm2 obtained RT which proofs insulation substrate. technique based sacrificial oxidation applied thin overlayer (SOL). SOLs between 15 and could be prepared. influence structural properties SiC film studied X-ray, AFM TEM measurements. It found that are dependent deposition SOL thickness. High can grown thicker than 50 nm. Possibilities for highest even much thinner discussed.