Oxidation and interface states in a-Si: H
作者： R. A. Street , J. C. Knights
DOI: 10.1080/01418638108222576
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摘要: Abstract In a-Si: H films with columnar growth morphology, the material between columns reacts air, leaving an Si–O suboxide coating on of estimated thickness 5–10 A. At H/oxide interface a dangling-bond density ∼3 × 1011 cm−2 develops time. We suggest that oxide layer and surface defects are characteristic exposed surfaces any film. It is emphasized defect states can have strong influence electronic properties material.
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