Physical and electrical investigation of ohmic contacts to AlGaAs/GaAs heterostructures
作者： R. P. Taylor , P. T. Coleridge , M. Davies , Y. Feng , J. P. McCaffrey
DOI: 10.1063/1.357908
关键词:
摘要: The mechanism by which Ni‐Au‐Ge metallizations establish electrical contact to the two‐dimensional electron gas (2DEG) in modulation‐doped AlGaAs/GaAs heterostructures is investigated. Transmission microscopy was used examine samples after characterization magnetoresistance measurements at cryogenic temperatures. We present a picture 2DEG of reduced density exists under deposited metallization. success contacting procedure described terms magnitude this and size, areal density, penetration depth series metallic spikes link 2DEG. suggest that behavior not dominated current injection process spike/2DEG interface but instead dictated scattering from array antidots formed dependence on size pad. implications for future nanostructure devices, fe...
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