Dangling bonds on silicon

摘要: The electron-paramagnetic-resonance signal that appears when Si is crushed, cleaved, or abraded shown to be proportional the areas of microcracks induced in specimen. These are more prevalent than previously realized. Detailed consideration shows a wide variety inexplicable data can now understood. include some effects oxygen and hydrogen, variability width, abrasive particle size, kind cleavage. origin unpaired electrons considered it concluded they may localized states on surfaces microcracks, such being apparently case Anderson localization. atoms crack subject spatially varying overlap forces stress fields whose energy range exceeds normal bandwidth, thus inducing temperature dependence paramagnetism discussed, including correlation corrections, yield approximately ${T}^{\ensuremath{-}1}$ as observed experimentally. A similar explanation applies Ge. Cleancleaved display negligible surface due pairing alternate atom sites. results suggest for amorphous Ge, small aggregates should possible source paramagnetism.