摘要: A multilayer technique for evaporation of Ohmic contacts onto CdS is described. The electrical properties these do not change markedly after vacuum heat treatment up to 350°C. This consists a sequential preparative layer, an active metal and possibly covering metal. Ti (preparative)‐Al (active)‐Pt (cover) sequence has been found most successful. All the more than forty evaporations investigated on single crystals, or evaporated recrystallized layers, showed characteristics between 2 mV 200 V only generation‐recombination noise above (at most) 300 Hz.
scitation.org
aip.org
sci-hub.se 参考文章(7)
K. W. Böer, A. S. Esbitt, W. M. Kaufman, Evaporated and Recrystallized CdS Layers Journal of Applied Physics. ,vol. 37, pp. 2664- 2678 ,(1966) , 10.1063/1.1782101
J.H. Gisolf, On the spontaneous current fluctuations in semiconductors Physica D: Nonlinear Phenomena. ,vol. 15, pp. 825- 832 ,(1949) , 10.1016/0031-8914(49)90086-5
Alvin M. Goodman, Evaporated Metallic Contacts to Conducting Cadmium Sulfide Single Crystals Journal of Applied Physics. ,vol. 35, pp. 573- 580 ,(1964) , 10.1063/1.1713419
W. G. Spitzer, C. A. Mead, Barrier Height Studies on Metal-Semiconductor Systems Journal of Applied Physics. ,vol. 34, pp. 3061- 3069 ,(1963) , 10.1063/1.1729121
Y. T. Sihvonen, D. R. Boyd, Ohmic Probe Contacts to CdS Crystals Journal of Applied Physics. ,vol. 29, pp. 1143- 1145 ,(1958) , 10.1063/1.1723391
R. W. Smith, Properties of Ohmic Contacts to Cadmium Sulfide Single Crystals Physical Review. ,vol. 97, pp. 1525- 1530 ,(1955) , 10.1103/PHYSREV.97.1525
W. M. Buttler, W. Muscheid, Die Bedeutung des elektrischen Kontaktes bei Untersuchungen an Kadmiumsulfid-Einkristallen. II Annalen der Physik. ,vol. 450, pp. 82- 111 ,(1954) , 10.1002/ANDP.19544500205