Barrier Height Studies on Metal-Semiconductor Systems

摘要: Photovoltaic and space‐charge capacitance measurements have been used to study the height of Schottky barrier at metal‐semiconductor interface a series metals evaporated onto ``vacuum cleaved'' samples n‐type CdS n‐ p‐type GaAs. Although heights for metal‐CdS increase with increasing metal work function as predicted by simple theory, significant deviations were noted. The measured on metal‐GaAs different temperatures show very little dependence appear be fixed relative valence band edge surface states. results are compatible model in which photoresponse, photon energies less than semiconductor energy gap, arises principally from photoemission carriers into semiconductor; however, sensitive method preparation comparisons other difficult.