Three-dimensional semiconductor storage device and preparation method for three-dimensional semiconductor storage device
作者： Ming Liu , Zongliang Huo
DOI:
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摘要: The invention discloses a three-dimensional storage semiconductor device based on 1T1R structure of vertical ring-grid transistor and preparation method for the device. switch current ratio can be effectively controlled by controlling channel width length so as to benefit multistate operation unit. Meanwhile, compared with horizontal transistor, has smaller domain size, that size reduced, thereby realizing array integration ultra-high density.
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