Charge modulated reflectance topography for probing in-plane carrier distribution in pentacene field-effect transistors
作者： Takaaki Manaka , Satoshi Kawashima , Mitsumasa Iwamoto
DOI: 10.1063/1.3490716
关键词:
摘要: By using charge modulated reflectance (CMR) topography, we showed that the in-plane carrier distribution in pentacene field-effect transistors (FETs) can be directly probed under device operation. Further, observed CMR signal is attributed to a decrease electron population highest occupied molecular orbital level, caused by hole injection. The profile along FET channel strongly depends on bias conditions. density decreases monotonously from source drain saturated region; this interpreted simple model based interfacial accumulated transportation.
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