Silicon nanodisk array design for effective light trapping in ultrathin c-Si

摘要: The use of ultrathin c-Si (crystalline silicon) wafers thinner than 20 μm for solar cells is a very promising approach to realize dramatic reduction in cell cost. However, the requires highly effective light trapping compensate optical absorption reduction. Conventional texturing micron scale hardly applicable wafers; thus, nano demanded. In general, nanotexturing inevitably accompanied by surface area enlargements, which must be minimized order suppress recombination minority carriers. this study, we demonstrate using simulations that periodic nanodisk arrays short heights less 200 nm and optimal periods are useful terms while low enlargements maintained. Double side with leads over 90% Lambertian limit enlargement kept below 1.5.