Structural Properties of a-Si:H Films with Improved Stability against Light Induced Degradation
作者： Gijs van Elzakker , Pavel Ŝutta , Miro Zeman
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摘要: X-ray diffraction (XRD) analysis of thin silicon films was carried out using both the symmetric Bragg-Brentano and asymmetric thin-film attachment geometries. The configuration allows quantitative phase reveals that amorphous deposited from silane diluted with hydrogen have strongest peak in XRD patterns located around 27.5 degrees. This corresponds to signal ordered domains tetragonal hydride not cubic crystallites. full width at half maximum (FWHM) this narrows 5.1 4.8 degrees as ratio flow (R) increases 20 does change significantly for higher dilutions. fabricated different dilution were applied absorber layers single-junction solar cells. Degradation experiments confirm a substantial reduction degradation when is increased R=0 R=20. light induced cells prepared R > further reduced by increasing R.
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