Structure and optical properties of the hydrogen diluted a-Si:H thin films prepared by PECVD with different deposition temperatures

摘要: The paper deals with the hydrogenated amorphous silicon (a-Si:H) films about 300 nm in thickness prepared by using rf-PECVD hydrogen dilution R = 10 of silane source gas growth regime onto clean Corning Eagle 2000 glass substrates at different deposition temperatures ranging from 50 to 200 °C. Structural and optical properties were obtained X-ray diffraction UV-Vis spectrophotometry. full width half maximum first scattering peak decreases increasing temperature up 150 °C then remains constant. Optical band-gaps are 1.65 1.76 eV, which slightly decrease temperature, whereas refractive index increases temperature. This indicates that density higher has increased.