Structural properties of amorphous silicon prepared from hydrogen-diluted silane
作者： M. Zeman , G. van Elzakker , F.D. Tichelaar , P. Sutta
DOI: 10.1080/14786430902960137
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摘要: A systematic structural analysis was carried out on amorphous silicon films prepared from hydrogen-diluted silane using plasma-enhanced chemical vapor deposition. Hydrogen dilution of during the growth a-Si:H absorber layers is used to suppress light-induced degradation solar cells. Transmission electron microscopy (TEM) shows that for higher hydrogen ratios becomes strongly inhomogeneous and transition microcrystalline phase occurs at a smaller thickness. detailed X-ray diffraction (XRD) reveals strongest peak in XRD patterns located around 27.5° corresponds signal ordered domains tetragonal hydride not cubic crystallites. The full width half maximum this narrows 5.1° 4.8° as ratio flow (R) increases 20 does change significantly dilutions. presence ...
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