Internal (SiH)Xgroups,X= 1–4, in microcrystalline hydrogenated silicon and their IR spectra on the basis of periodic DFT modelling

作者: Alexander V. Larin , Dar’ya V. Milyaeva , Andrey A. Rybakov , Dmitrii S. Bezrukov , Dmitrii N. Trubnikov

DOI: 10.1080/00268976.2013.817621

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摘要: Vibrational Si–H frequencies were calculated on the basis of density functional theory (DFT) using periodic boundary conditions for N-Si voids, N 1 at IGB. The low stretching modes (LSM) are thus assigned to groups presented both voids and Similar relative stability is obtained with two different DFT approaches, i.e., B3LYP atomic set Perdew-Burke-Ernzerhof (PBE) plane wave set. This result ...

参考文章(23)
J. Baum, K. K. Gleason, A. Pines, A. N. Garroway, J. A. Reimer, Multiple-quantum NMR study of clustering in hydrogenated amorphous silicon. Physical Review Letters. ,vol. 56, pp. 1377- 1380 ,(1986) , 10.1103/PHYSREVLETT.56.1377
John P. Perdew, Kieron Burke, Matthias Ernzerhof, Generalized Gradient Approximation Made Simple Physical Review Letters. ,vol. 77, pp. 3865- 3868 ,(1996) , 10.1103/PHYSREVLETT.77.3865
Peter Y. Yu, Manuel Cardona, Lu. J. Sham, Fundamentals of semiconductors : physics and materials properties Physics Today. ,vol. 50, pp. 76- 77 ,(1997) , 10.1063/1.882012
David C. Bobela, T. Su, P.C. Taylor, G. Ganguly, Microscopic properties of silicon dihydride bonding in a-Si:H Journal of Non-crystalline Solids. ,vol. 352, pp. 1041- 1044 ,(2006) , 10.1016/J.JNONCRYSOL.2006.01.062
John P. Perdew, J. A. Chevary, S. H. Vosko, Koblar A. Jackson, Mark R. Pederson, D. J. Singh, Carlos Fiolhais, Atoms, molecules, solids, and surfaces: Applications of the generalized gradient approximation for exchange and correlation. Physical Review B. ,vol. 46, pp. 6671- 6687 ,(1992) , 10.1103/PHYSREVB.46.6671
S. Chakraborty, D. A. Drabold, Static and dynamic properties of hydrogenated amorphous silicon with voids Physical Review B. ,vol. 79, pp. 115214- ,(2009) , 10.1103/PHYSREVB.79.115214
J. Daey Ouwens, R. E. I. Schropp, Hydrogen microstructure in hydrogenated amorphous silicon Physical Review B. ,vol. 54, pp. 17759- 17762 ,(1996) , 10.1103/PHYSREVB.54.17759
W.M.M. Kessels, A.H.M. Smets, D.C. Marra, E.S. Aydil, D.C. Schram, M.C.M. van de Sanden, On the growth mechanism of a-Si:H Thin Solid Films. ,vol. 383, pp. 154- 160 ,(2001) , 10.1016/S0040-6090(00)01594-7
M. Zeman, G. van Elzakker, F.D. Tichelaar, P. Sutta, Structural properties of amorphous silicon prepared from hydrogen-diluted silane Philosophical Magazine. ,vol. 89, pp. 2435- 2448 ,(2009) , 10.1080/14786430902960137
G. Lucovsky, R. J. Nemanich, J. C. Knights, Structural interpretation of the vibrational spectra ofa-Si: H alloys Physical Review B. ,vol. 19, pp. 2064- 2073 ,(1979) , 10.1103/PHYSREVB.19.2064