Stability of thin film solar cells having less-hydrogenated amorphous silicon i-layers
作者： Satoshi Shimizu , Akihisa Matsuda , Michio Kondo
DOI: 10.1016/J.SOLMAT.2008.04.017
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摘要: Abstract In this study, highly stabilized hydrogenated amorphous silicon films and their solar cells were developed. The fabricated using the triode deposition system, where a mesh was installed between cathode anode (substrate) in plasma-enhanced chemical vapor system. At substrate temperature of 250 °C, hydrogen concentration resulting film (Si–H=4.0 at%, Si–H 2 20 cm −3 ) significantly less than that conventionally prepared films. used to develop i -layers exhibited low degradation ratio 7.96%.
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