Cluster-Suppressed Plasma Chemical Vapor Deposition Method for High Quality Hydrogenated Amorphous Silicon Films

摘要: We have developed a novel plasma chemical vapor deposition (PCVD) method for preparing high quality hydrogenated amorphous silicon (a-Si:H) films, which suppresses effectively growth of clusters by transporting them out the reactor using gas flow and thermophoresis. By utilizing this cluster-suppressed PCVD method, we demonstrated quite a-Si:H microstructure parameter Rα can be reduced below 0.003. The decrease in value is closely related to cluster amount. Preliminary evaluation fill factor (FF) Schottky solar cell films Rα=0.057 shows initial FFi=0.57 stabilized after-light-soaking FFa=0.53.