Chapter 1 Application Utilizing Bulk Negative Resistance
作者： John A. Copeland , Stephen Knight
DOI: 10.1016/S0080-8784(08)63006-9
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摘要: Publisher Summary At the present time, a completely new class of electronic devices is being developed on basis bulk negative resistance that appears in n -type GaAs and other compound semiconductors. This chapter discusses with emphasis basic physical phenomena, ways which it can be utilized, practical considerations for device design, some fabrication techniques, have been recently developed. The InP (III–V compounds) as well CdTe ZnSe (II–VI due to two distinct types valleys or k -space minima conduction band. mechanism, known transferred-electron effect, two-valley Ridley–Watkins–Hilsum subject most this chapter. Device design are presented thermal properties semiconductor structure along appropriate heat sinking discussed. discussion failure possible features circumvent also described. In addition, crucial technologies fabrication—material growth application ohmic contacts—are
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