作者: Dong Hong , Shengwen Yu , Jinrong Cheng
DOI: 10.1016/J.CAP.2011.01.029
关键词:
摘要: Abstract In this paper, BiFeO3 (BFO), Bi0.95Sm0.05FeO3 (BSF), BiFe0.95Ti0.05O3 (BFT) and Bi0.95Sm0.05Fe0.95Ti0.05O3 (BSFT) thin films were deposited on the Pt (111)/TiO2/SiO2/Si(100) substrates by sol–gel technique. X-ray diffraction scanning electron microscope measurements explain that increased lattice constant uniform surface morphology can be obtained Sm–Ti co-substitution in BFO film. Meanwhile, dielectric is improved up to 230 at 100 kHz leakage current density decreases 1.5 × 10−5 A/cm2 300 kV/cm. Consequently, ferroelectricity of BSFT film remarkably enhanced with 2Pr 17.024 μC/cm2 563 kV/cm. The electrical conductivity 387 kV/cm calculated 2.8 × 10−12 Ω−1 cm−1.