Optically pumped laser oscillation at ≊2.9 μm of a HgCdTe layer grown by metalorganic chemical vapor deposition
作者： A. Ravid , A. Zussman , G. Cinader , A. Oron
DOI: 10.1063/1.101930
关键词:
摘要: Photopumped pulsed stimulated emission at 2.9 μm in a HgCdTe layer grown by metalorganic chemical vapor deposition on CdTe substrate was studied as function of temperature. The threshold power the laser (photoexcited GaAs diode laser) increased from 0.04 W 12 K to 1.58 150 K. Above 50 K, temperature dependence is exponential, yielding T0 31 From observed wavelength Cd mole fraction x=0.422 determined. far‐field angular full width e−2 peak intensity 5.5° and 9.5° perpendicular parallel film plane, respectively.
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(6)
F. R. Nash, Mode guidance parallel to the junction plane of double‐heterostructure GaAs lasers Journal of Applied Physics. ,vol. 44, pp. 4696- 4707 ,(1973) , 10.1063/1.1662022
G. L. Hansen, J. L. Schmit, T. N. Casselman, Energy gap versus alloy composition and temperature in Hg1−xCdxTe Journal of Applied Physics. ,vol. 53, pp. 7099- 7101 ,(1982) , 10.1063/1.330018
R. S. Eng, J. F. Butler, K. J. Linden, Tunable Diode Laser Spectroscopy: An Invited Review Optical Engineering. ,vol. 19, pp. 196945- ,(1980) , 10.1117/12.7972642
T. C. Harman, Optically pumped LPE-grown Hg1−xCdxTe lasers Journal of Electronic Materials. ,vol. 8, pp. 191- 200 ,(1979) , 10.1007/BF02663272
J. P. van der Ziel, T. H. Chiu, W. T. Tsang, Optically pumped laser oscillation at 3.9 μm from Al0.5Ga0.5Sb/InAs0.91Sb0.09/Al0.5Ga0.5Sb double heterostructures grown by molecular beam epitaxy on GaSb Applied Physics Letters. ,vol. 48, pp. 315- 317 ,(1986) , 10.1063/1.96537
P . W. France, S. F. Carter, M . W. Moore, J. R. .. Williams, Ultimate Realistic Losses Of ZrF 4 Based Ir Fibres O-E/LASE'86 Symp (January 1986, Los Angeles). ,vol. 0618, pp. 51- 57 ,(1986) , 10.1117/12.961093