Mesa stripe transverse injection laser in HgCdTe
作者： P. Bouchut , G. Destefanis , J. Bablet , A. Million , T. Colin
DOI: 10.1063/1.107496
关键词:
摘要: In this letter, we report the fabrication and operation of narrow stripe, transverse injection, HgCdTe lasers. The double heterostructure laser was grown by molecular beam epitaxy on (111) CdZnTe substrate. n‐type base extrinsically indium doped but upper p‐type confining layer only deviation from stoichiometry. Laser emissions at 3.40 3.56 μm were obtained 78 K under pulsed current conditions. Threshold as low 48 mA differential quantum efficiency high 4.2% achieved. Over 60 threshold has an exponential increase with temperature a T0 parameter 8 K.
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