Performance of high-Tc superconducting quantum interference devices with resistively shunted inductances
作者： D. J. Kang , W. E. Booij , M. G. Blamire , E. J. Tarte
DOI: 10.1063/1.122939
关键词:
摘要: The voltage modulation depths, ΔV of high-Tc direct current superconducting quantum interference devices (SQUIDs) with resistors connected in parallel their inductances were investigated. Both the junctions and SQUIDs fabricated using focused electron-beam irradiation. effect varying resistor value (using ion-beam trimming) screening parameter βL (by temperature hence junction critical current) studied. Significant enhancement relative to an equivalent unshunted SQUID for values up 50 was observed, most effective shunt found be approximately equal resistance.
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