A transmission electron microscopy study of interfacial reactions in the Fe/GaAs system
作者： M Rahmoune , J.P Eymery , Ph Goudeau , M.F Denanot
DOI: 10.1016/S0040-6090(96)08912-2
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摘要: Abstract The reaction between thin Fe films and gallium arsenide is studied using chiefly cross-sectional transmission electron microscopy. films, 50–120 nm in thickness, were deposited onto (100) GaAs substrates by ion-beam sputtering the Fe/GaAs couples then annealed under vacuum at temperatures ranging 400 550°C. presence of a amorphous intermixed layer interface pointed out as-deposited conditions; this consists three elements Fe, Ga As. determination residual internal stress also performed sin2ψ method result order −2 GPa. Iron starts to react with ⋍ °C, producing layered Fe/Fe3Ga/Fe2As + FeAs/GaAs structure. sequence suggests that diffuses into liberates while forming iron arsenides. After annealing, bimaterial exhibits interfacial undulations which are discussed terms strain-energy relaxation.
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