Vertical IGFET with internal gate and method for making same
作者： Lubomir L. Jastrzebski , Scott C. Blackstone , John F. Corboy
DOI:
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摘要: A vertical IGFET comprising a substantially planar silicon wafer with source electrode on one major surface and drain the opposite is disclosed. An insulated gate electrode, which includes conductive finger portion surrounded by an insulating layer, internally disposed in such that predetermined voltage applied to will regulate current flow between electrodes. The device fabricated utilizing epitaxial lateral overgrowth technique for depositing monocrystalline over substrate.
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