Gallium arsenide static induction transistor

摘要: A gallium arsenide static induction transistor of normally-off type simple in manufacture and exhibiting a superior function suitable for use low medium power operation integrated circuit is obtained by arranging so that its channel region has length l (μm), width (μm) an impurity concentration N (cm -3 ), the ratio l/w 0.5-5.0 product Nw 2 not larger than 2.5×10 15 cm .μm .