Static induction transistors
作者： Richard R. Siergiej , Anant K. Agarwal , Charles D. Brandt , Rowland C. Clarke
DOI:
关键词:
摘要: A static induction transistor includes a substrate and drift layer with different doping levels. At least two mesas are formed on the heavily doped region is positioned top surface of each mesas. gate contact extends along bottom recess between side forming recess. The also portion In one embodiment invention, notch in region.
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