Resist trimming in high-density CF4/O2 plasmas for sub-0.1 μm device fabrication

摘要: Resist trimming using a CF4/O2 plasma generated by an inductively coupled high-density source is investigated. Results show that the resist process applicable for fabrication of sub-0.1 μm polysilicon gate electrode with conventional 248 nm lithography. The trim rate depends strongly on gas composition, temperature, rf power, bias voltage, reactor pressure and total flow. increases increasing power but decreases higher voltage. For typical condition at composition CF4 O2 ratio 3.3:1, rates are 1.0 1.2 nm/s dense isolated lines, respectively. By examining effect various parameters, it found dominated neutral reactant species. Angle-resolved x-ray photoelectron spectroscopy shows fluorinated carbon oxyfluoride polymer deposited sidewall photoresist. degree carbo...