Mass spectrometry studies of resist trimming processes in HBr∕O2 and Cl2∕O2 chemistries

摘要: In a previous article, parametric study of HBr∕O2 and Cl2∕O2 resist trimming processes correlated to x-ray photoelectron spectroscopy (XPS) analyses has been performed. The present article confirms the preliminary results obtained by XPS. Mass spectrometry experiments have established that slow erosion rate measured in trim chemistries is attributed competitive etching atomic chlorine oxygen, while chemistries, oxygen main species, bromine playing only minor role. species originating from dissociation plasmas generates formation volatile resist-etch-by-products such as CO CO2, halogen (bromine or chlorine) less heavier CxHyBrz with CxHyClz chlorine. also shown plasma conditions leading higher concentration h...