An electroplating topography model based on layout-dependent variation of copper deposition rate

作者: Qiang Wang , Lan Chen , Zhigang Li , Wenbiao Ruan

DOI: 10.1088/1674-4926/32/10/105011

关键词:

摘要: A layout-pattern-dependent electroplating model is developed based on the physical mechanism of process. Our proposed has an advantage over former ones due to a consideration variation copper deposition rate with different layout parameters during The simulation results compared silicon data demonstrate improvement in accuracy.

参考文章(17)
Tamba Edward Gbondo-Tugbawa, Chip-scale modeling of pattern dependencies in copper chemical mechanical polishing processes Massachusetts Institute of Technology. ,(2002)
H.C. Chen, M.S. Yang, J.Y. Wu, W. Lur, The investigation of electroplating deposited copper films for advanced VLSI interconnection international interconnect technology conference. pp. 65- 67 ,(1999) , 10.1109/IITC.1999.787080
Timothy J. Pricer, Mark J. Kushner, Richard C. Alkire, Monte Carlo Simulation of the Electrodeposition of Copper I. Additive-Free Acidic Sulfate Solution Journal of The Electrochemical Society. ,vol. 149, ,(2002) , 10.1149/1.1488648
M. Hughes, C. Bailey, K. McManus, Multi Physics Modelling of the Electrodeposition Process international conference on thermal mechanial and multi physics simulation and experiments in micro electronics and micro systems. pp. 1- 8 ,(2007) , 10.1109/ESIME.2007.359961
E.S. Masuku, A.R. Mileham, H. Hardisty, A.N. Bramley, C. Johal, P. Detassis, A finite element simulation of the electroplating process CIRP Annals. ,vol. 51, pp. 169- 172 ,(2002) , 10.1016/S0007-8506(07)61492-9
P. C. Andricacos, C. Uzoh, J. O. Dukovic, J. Horkans, H. Deligianni, Damascene Copper electroplating for chip interconnections Ibm Journal of Research and Development. ,vol. 42, pp. 567- 574 ,(1998) , 10.1147/RD.425.0567
D. Josell, D. Wheeler, W. H. Huber, J. E. Bonevich, T. P. Moffat, A Simple Equation for Predicting Superconformal Electrodeposition in Submicrometer Trenches Journal of The Electrochemical Society. ,vol. 148, ,(2001) , 10.1149/1.1414287