Semiconductor device method

摘要: This invention is to a method for producing uniform nitrogen doped layer in silicon that effectively reduces boron transient enhanced diffusion (TED) ultra shallow junction formation. A substrate ( 10 ) from an n-type single crystal grown the [100] direction and cut into wafers with (100) faces exposed pre-amorphized by germanium implantation 11 ). Nitrogen implanted depth of 0.7 μm through amorphous multiple implantations at energies ranging keV 250 12 Boron contained 13 After implantation, subjected rapid thermal anneal process remove lattice damage activate boron. The resulting profiles 14 this exhibit suppressed TED enable formation p + junctions.