Method of multiple pulse laser annealing to activate ultra-shallow junctions

摘要: A method for forming a highly activated ultra shallow ion implanted semiconductive elements use in sub-tenth micron MOSFET technology is described. key feature of the ability to activate impurity active state without permitting dopant diffuse further deepen junction. selected single crystalline silicon region first amorphized by implanting heavy such as or germanium. example boron then and pulsed laser annealing whereby pulse fluence, frequency, duration are chosen maintain just below it's melting temperature. It found that temperature there sufficient local mobility secure into positions within matrix achieve high degree activation with essentially no change concentration profile. The selection proper parameters optimized observation reduction sheet resistance profile measured on test site. Application applied MOS FET CMOS device. additional processing steps required invention simultaneously both n-channel p-channel devices device pair.