Method of fabricating a thin film transistor

作者: Hongyong Zhang , Satoshi Teramoto

DOI:

关键词:

摘要: Method of fabricating TFTs starts with forming a nickel film selectively on bottom layer which is formed substrate. An amorphous silicon the and heated to crystallize it. The crystallized irradiated infrared light anneal Thus, crystalline having excellent crystallinity obtained. are built, using this film.

参考文章(129)
Tatsumi Hiramoto, Semiconductor annealing device ,(1983)
John Franka, Paul T. Lin, Jonathan C. Dahm, Philip J. Tobin, Israel A. Lesk, Bich-Yen Nguyen, Gary L. Huffman, Young Limb, Method of removing contaminants ,(1992)
Toshiyuki Sameshima, Masaki Hara, Naoki Sano, Setsuo Usui, Method of crystallizing a semiconductor thin film ,(1991)
Hideki Uochi, Hongyong Zhang, Shunpei Yamazaki, Hiroki Adachi, Yasuhiko Takemura, Method of making TFT with anodic oxidation process using positive and negative voltages ,(1993)
Toshiji Hamatani, Shunpei Yamazaki, Akira Mase, Semiconductor device with oxide layer ,(1992)
Michael G. Hack, Richard I. Johnson, Ping Mei, Rene A. Lujan, James B. Boyce, Low temperature process for laser dehydrogenation and crystallization of amorphous silicon ,(1993)
Lothar Risch, Karlheinz Friedrich, Erich Pammer, Process of reducing density of fast surface states in mos devices ,(1980)
Katsuki Furukawa, Akira Suzuki, Process for producing a SiC semiconductor device ,(1984)
Arthur K. Hochberg, Andre Lagendijk, David A. Roberts, Furnace tube cleaning process ,(1993)