Engineering flat surfaces on materials doped via pulsed laser irradiation

摘要: Methods and apparatus for processing a substrate (e.g., semiconductor substrate) is disclosed that includes irradiating at least portion of the surface with plurality short radiation pulses while exposed to dopant compound. The are selected have fluence greater than melting threshold (a minimum needed pulse cause melting) less an ablation ablation). In this manner quantity can be incorporated into ensuring roughness substrate's significantly wavelength applied pulses.