Quantum-dot quantum well CdS/HgS/CdS: Theory and experiment.
作者： D. Schooss , A. Mews , A. Eychmüller , H. Weller
DOI: 10.1103/PHYSREVB.49.17072
关键词:
摘要: An extended theoretical approach for calculating the 1s-1s electronic transition in spherically layered semiconductor quantum dots is presented. The extension over common effective-mass approximation includes implementation of Coulomb interaction and finite potential wells at particle boundaries. calculations are carried out quantum-dot well CdS/HgS/CdS compared to recently available experimental results. wave functions electrons holes spreading entire structure probabilities presence different layers, as outside surrounding dielectric water,
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