作者: A. Talbi , E. Feddi , A. Oukerroum , E. Assaid , F. Dujardin
DOI: 10.1016/J.SPMI.2015.06.029
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摘要: Abstract The control of single dopant or “solitary dopant” in semiconductors constitute a challenge to achieve new range tunable optoelectronic devices. Knowing that the properties doped monocrystals are very sensitive different external perturbations, aim this study is understand effect magnetic field on ground state energy an off-center ionized donor core/shell quantum dot (CSQD). binding energies with and without applied determined by Ritz variational method taking into account electron-impurity correlation trial wave function deduced from second-order perturbation. It has been found affects strongly energy, its varies as core radius shell thickness. We have shown existence threshold ratio / b crit which represents limit between tridimensional spherical surface confinement. In addition our analysis demonstrates important influence position material.