Epitaxial growth of delafossite CuFeO2 thin films by pulse laser deposition
作者： S.Z. Li , J. Liu , X.Z Wang , B.W. Yan , H. Li
DOI: 10.1016/J.PHYSB.2012.03.037
关键词:
摘要: Abstract CuFeO 2 (CFO) is a delafossite-type compound and well known p-type semiconductor. Epitaxial thin films were prepared on Al O 3 (0 0 0 1) substrates by pulsed laser deposition. The deposition, performed at 500 °C 10 Pa leads to epitaxial phase with extremely low roughness high density. oxygen pressure modulates the band energy properties of Cu 2p, Fe 3p O1s. results show that deposition contributes chemistry ingredient magnetization properties. Furthermore, spin-glass behavior identified weak-ferromagnetization property found temperature about ∼5 K.
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