Dielectrically isolated semiconductor devices

摘要: The invention is a method of fabricating dielectrically isolated semiconductor regions adapted for the construction an integrated circuit on epitaxial wafer wherein has first layer monocrystalline n+ type silicon predetermined thickness and second epitaxially deposited n-type which substantially thinner than layer. A dioxide grown back side polycrystalline onto An aluminum oxide mask formed defining plurality grooves around active within are by sputter etching process. Silicon thermally each exposed process to isolate after devices may be in regions.