Materials options for field‐effect transistors

摘要: The evolution of monolithic high‐speed digital and analog microwave field‐effect transistor (FET) technologies is linked inextricably to synthesis, control, understanding the properties semiconducting binary, ternary, quaternary III–V compounds. It also application use ion implantation as a pivotal corollary process. Selection Schottky barrier, insulated‐gated or heterojunction gate technology defines, in part, options available terms fundamental surface interfacial these Others concern electron transport processes under depletion, inversion accumulation regimes, solution metallurgical problems involved formation ohmic blocking contacts, free carrier concentration mobility profiles, their stability function process variables used make such FET.