Photoelectron diffraction studies on the structure of sulfur-passivated InP(100) and CaF2 layers grown on S/InP(100)

摘要: Abstract The structure of an (NH4)2Sx-treated surface InP(100) and CaF2 epitaxial layers grown on S/InP(100) has been studied by X-ray photoelectron diffraction (XPED). Single-scattering cluster calculations with spherical-wave scattering (SSC-SW) for the (1 × 1) bridge-site model give a good description XPED from S overlayer. In addition, we found that there is little anion exchange reaction between P in process (NH4)2Sx treatment. On other hand, results thin films revealed grows epitaxially as CaF2(100) islands. particular, lattice film strained at initial stages epitaxy, owing to InP mismatch. We determined strains along lateral vertical directions comparing experimental theoretical angular distributions Ca 2p F 1s intensities.