作者: M. V. S. Ramakrishna , Gamani Karunasiri , U. Sridhar , G. X. Chen
DOI: 10.1117/12.347954
关键词:
摘要: There is a considerable interest in recent years on microbolometer infrared detectors, due to the possibility of operating them at room temperature and compatibility with CMOS fabrication process. In this work, we have fabricated bolometers Ti a:Ge as sensing elements using compatible Noise measurements indicate that detectivity D* over 1.5 X 109 cmHz-1/2W-1 4 30 Hz could be realized for bolometers, respectively. With further improvements design processing, it estimated bolometer focal plane arrays (FPAs) noise equivalent difference (NETD) less than 50 mK are realizable above materials.© (1999) COPYRIGHT SPIE--The International Society Optical Engineering. Downloading abstract permitted personal use only.