Dual floating gate programmable read only memory cell structure and method for its fabrication and operation

摘要: A flash memory cell in the form of a transistor capable storing multi-bit binary data is disclosed. pair floating gates are provided beneath control gate. The gate connected to word line while active doped regions (source and drain regions) respective digit lines. separately charged read out by controlling voltages applied charges decoded into value. One or both has side insulator which connects through conductor an associated region thereby forming capacitor across between This facilitates operation as cell. Methods fabricating operating it also