Method for making a multibit transistor
作者： Marius Orlowski
DOI:
关键词: Gate oxide 、 Electrical engineering 、 Gate stack 、 Materials science 、 Storage material 、 Lateral recess 、 Optoelectronics 、 Dielectric layer 、 Dielectric 、 Transistor 、 Substrate (electronics)
摘要: A method for making a transistor ( 301 ) is provided. In accordance with the method, semiconductor substrate 201, 203 provided, and gate stack formed on substrate. The comprises first 205 ), second 207 third 209 dielectric layers, wherein layer disposed between said layers. lateral recess 213 then created in layer, charge storage material 215 deposited recess.
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